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Definition of T-RAM - PCMag
What does T-RAM actually mean? Find out inside PCMag's comprehensive tech and computer-related encyclopedia.
Thyristor RAM (T-RAM): A high-speed high-density embedded …
This article consists of a collection of slides from the author's conference presentation on T-RAM Semiconductor's Thyristor RAM (T-RAM), a high speed high density embedded memory technology for nanoscale CMOS.
Pinestream Consulting Group -- Business & Corporate Development
T-RAM is a Negative Differential Resistance-based (NDR-based) SRAM cell that is 4x faster than existing DRAMs and 4x denser than SRAMs. T-RAM is compatible with mainstream CMOS processes using standard equipment and standard materials while the performance of logic transistors remains unaffected.
T-RAM Semiconductor - Crunchbase Company Profile & Funding
T-RAM Semiconductor is a fabless semiconductor company that has developed an innovative process based on TCCT (Thin-Capacitively-Coupled-Thyristor) technology, which produces a memory cell one-fourth to one-eighth the size of competing 6T-SRAM (Six Transistor-Static Random Access Memory) memory
T-RAM | LinkedIn
T-RAM Semiconductor is the inventor and developer of a revolutionary RAM technology based on our proprietary TCCT™ technology. We focus on developing and licensing IP based on our unique...
T-RAM - Semantic Scholar
Thyristor RAM (T-RAM) is a new (2009) type of random-access memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.
T-RAM Semiconductor - Company Profile - Tracxn
2025年1月29日 · T-RAM Semiconductor is a fabless semiconductor company that has developed TCCT (Thin-Capacitively-Coupled-Thyristor) technology, which produces a memory cell one-fourth to one-eighth the size of 6T-SRAM (Six Transistor …
A novel thyristor-based SRAM cell (T-RAM) for high-speed, low …
T-RAM is a novel high-density SRAM cell based on a vertical surrounding-gate thyristor with a novel gate-assisted switching mechanism. In this paper, the first experimental integration of the vertical surrounding-gate thyristors and planar NMOS-FETs to make T-RAM cells is reported.
T-RAM is a progressive and proactive process used within Sellafield Ltd. to identify and mitigate risks that would otherwise threaten the required performance of physical assets throughout their intended life.
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