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Electron volt (symbol eV) is a unit of energy equal to approximately 1.6×10 − 19 joules (symbol J). By definition, it is the amount of energy gained (or lost) by the charge of a single electron moving across an electric potential difference of one volt.

A semiconductor has the bandgap Eg=1eV. Its electron and hole density of states effective masses are me∗/me=0.2 and mh∗/me=1.2. At T0=300 K, its intrinsic carrier concentration is ni(T0)=1011 cm−3. It is doped at Nd=1015 cm−3 donors with ionization energy Edi=0.05eV. Donor degeneracy factor gd=2.

A photon of wavelength 4 × 10 – 7 m strikes on metal surface, the work function of the metal being 2.13 eV. . Calc

The work function of metal is 1 eV. Light of wavelength 3000 ∘ A is incident on this metal surface. The velocity of emitted photo-electrons will be

55.One mole of photon, each of frequency 2500S-1 ,would have approximately a total energy of 10erg, 1joule, 1ev, 1MeV

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Light of two different frequencies whose photons have energies 1eV and 2.5 eV respectively, successively illuminates a metal of work function 0.5eV. The ratio of maximum kinetic energy of the emitted electron will be

An unknown semiconductor has Eg=1.1eV and Nc=Nv. It is doped with 1016/cm3 donor atoms. (a) Determine the type of the semiconductor after doping. (b) Given that EF is 0.2eV below Ec, calculate ni and the concentration of electrons and holes in the semiconductor at 300∘K. (c) Draw the band diagram with appropriate labels.