Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

These are analogous to the terminals on a bipolar transistor, in that the source fulfills a similar role to the emitter, the gate to the base, and the drain to the collector. Thus the three basic ...

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

The most important parameters are drain-source maximum current ... wired between gate and source. Unlike with BJT transistors that need a constant current flow, you only need to charge a gate ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...

The exterior layers of the transistor are known as the "drain" and "source," with the central layer being referred to as the "gate". The function of the transistor is to utilize the voltage applied to ...

By this point, the distance between the source and drain had been reduced so ... which gives better control than the planar transistor’s single-sided gate. But between strained silicon and ...

1: Planar transistors vs. finFETs vs ... The inner spacer module provides control of the effective gate length and also isolates the gate from the source/drain epi,” said Andrew Cross, process control ...

Until earlier this decade, the scaling and performance trends of the logic transistor were mainly the result of SiO 2 gate oxide scaling as well as source–drain junction and well engineering.

MOS transistor is a 4-terminal device having terminal drains, source, gate and body (substrate). Figure 1 shows the 3-dimentional structure of NMOS. The NMOS transistor is formed on a p-type silicon ...