SemiQ, a designer and developer of silicon carbide (SiC) solutions, has announced a new family of three 1200V SiC full-bridge modules, each integrating two of the company's rugged high-speed switching ...

Modules integrate two high-speed switching SiC MOSFETs with reliable body diode and deliver up to 333W with continuous drain up to 102A SemiQ Inc, a developer of SiC devices, has announced a family of ...

Tested beyond 1350W, the new SiC full-bridge modules feature two low-loss, high-speed switching SiC MOSFETs with a reliable body diode. SemiQ Inc. has introduced a new family of three 1200V SiC ...

Abstract: The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage ...

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A Magisk Module to monitor and fix potential Bootloops and SystemUI failures.

SEMIQ QSiC 1200V MOSFET third-generation SiC device shrinks the die size while improving switching speeds and efficiency. Device is 20% smaller versus firm’s second-generation SiC MOSFETs and has been ...

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