High Temperature Storage Test: Here, drivers are evaluated at temperatures around 125±3°C without power for periods ranging from 2 to 1000 hours. This test assesses the long-term stability of the ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
Magnachip Semiconductor Corporation announced the launch of two new 6th-eneration (Gen6) 650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters.
Cambridge GaN Devices (CGD) has revealed more details about a solution that will enable the company to address EV powertrain ...
After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light ...
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics simpler to design and implement, today ...
TDK Corporation has unveiled the EPCOS EP9 series (ordering code: B82804E), which is more compact than the existing E10EM series of surface-mount transformers designed especially for IGBT and FET gate ...
A transformer designed for high-voltage systems ensures performance with low coupling capacitance, strong insulation & a wide ...
TDK CORP. EPCOS EP9 series (ordering code: B82804E) gate driver transformer is more compact than firm’s existing E10EM series of surface-mount devices ...
Parallel combination of ICeGaN HEMT and IGBT delivers high efficiency at reduced cost Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-base ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback