By Sonia Fernandez In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled ...

D materials in 3D transistors; electrochemical memristive mechanism; matching substrates for power electronics.

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

In a significant advancement for semiconductor technology, ECE's Prof. Kaustav Banerjee , co-authors Arnab Pal & Wei Cao and researchers have unveiled novel three-dimensional (3D) transistors ...

TI’s  TPS1685 claims to be the industry’s first 48V integrated hot-swap eFuse with power-path protection to support data ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Turning nanowires into FETs unlocks ultra-small, high-performance transistors with improved electrostatic control and ...

What Is Fetch.ai (FET)? Fetch.ai was founded in 2017 by Humayun Sheikh and Toby Simpson, who have backgrounds in AI research and blockchain technology. The project aims to create a decentralized ...

Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China ...

Is Moore's Law really dead? How small can a transistor be? And what in the world is "dark silicon?" Read on to find out. Named for Intel co-founder Gordon Moore, Moore’s Law is the observation ...

Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States ...

Should the crypto market undergo a bullish reversal, the demand for Artificial Superintelligence Alliance (FET) could surge, potentially pushing its price beyond $1. Since its introduction, FET has ...