1-VIA’s VSCOM4l400ABG IP is a 1.8V low-noise unbuffered programmable 0.6 and 0.8V Bandgap Voltage References (BGR) with eight 50μA reference output currents implemented in TSMC12/16nm CMOS FinFET ...

Their proposed approach, outlined in a Nature Physics paper, entails the use of a carefully designed phononic bandgap metamaterial that could suppress the interactions of qubits with TLSs.

We show here that the argument presented by Rotenberg et al. in the preceding comment to account for the energy gap reported by us 1 in epitaxial graphene on 6H-SiC is unfounded. In our view, the ...

The ODT-REF-40LP-SV1P8-ULP140N is an ultra-low power CMOS bandgap reference designed in a 40nm standard CMOS process without needing the use of any bipolar devices. This IP operates over a temperature ...

UNSW professor Xiaojing Hao discusses her hopes for the potential of kesterite as an alternative PV technology.

In Silicon technologies PTAT and bandgap circuits are commonly used to create respectively a current proportional to temperature and a constant voltage. These currents and voltages are used to bias ...

According to Diamfab’s Chicot, one of the key advantages to synthetic diamond materials is its ability to withstand very high ...

The global semiconductor company that bought a vacant chip fabrication facility built by New York taxpayers is seeking $3.4 ...

“This particular low-bandgap GaInNAsSb cell is developed to be used as part of lattice-matched multi-junction solar cells,” the research corresponding author, Riku Isoaho, told pv magazine.

Scientists have discovered a groundbreaking way to fine-tune quantum dots using light instead of traditional chemical methods ...

For many years now, Infineon’s Wide-Bandgap Developer Forum has been an exciting event, bringing together experts from the ...