1-VIA’s VSCOM4l400ABG IP is a 1.8V low-noise unbuffered programmable 0.6 and 0.8V Bandgap Voltage References (BGR) with eight 50μA reference output currents implemented in TSMC12/16nm CMOS FinFET ...

We show here that the argument presented by Rotenberg et al. in the preceding comment to account for the energy gap reported by us 1 in epitaxial graphene on 6H-SiC is unfounded. In our view, the ...

Their proposed approach, outlined in a Nature Physics paper, entails the use of a carefully designed phononic bandgap metamaterial that could suppress the interactions of qubits with TLSs.

The ODT-REF-40LP-SV1P8-ULP140N is an ultra-low power CMOS bandgap reference designed in a 40nm standard CMOS process without needing the use of any bipolar devices. This IP operates over a temperature ...

The global semiconductor company that bought a vacant chip fabrication facility built by New York taxpayers is seeking $3.4 ...

According to Diamfab’s Chicot, one of the key advantages to synthetic diamond materials is its ability to withstand very high ...

With unmatched thermal conductivity and a wide bandgap, diamonds are poised to meet the increasing demand for more efficient, ...

“This particular low-bandgap GaInNAsSb cell is developed to be used as part of lattice-matched multi-junction solar cells,” the research corresponding author, Riku Isoaho, told pv magazine.

Scientists have discovered a groundbreaking way to fine-tune quantum dots using light instead of traditional chemical methods ...

For many years now, Infineon’s Wide-Bandgap Developer Forum has been an exciting event, bringing together experts from the ...

Researchers have described a transformation of graphene in an entirely different form of carbon. The transformation preserves ...