Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

By this point, the distance between the source and drain had been reduced so ... which gives better control than the planar transistor’s single-sided gate. But between strained silicon and ...

Researchers from Arizona State University are claiming to have fabricated the first AlN transistor that’s grown on a native ...

Such high-speed transistors must, however, scale to large gate widths to be suitable for general circuit design ... The maximum transconductance was 0.88mS/μm at 0.5 V drain-source voltage, with ...

we investigated the basic characteristics of the n-and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope ( 1 mV/dec ...

You need a TVS diode because many voltage regulators do not have the ability to sink current, nor can they respond fast ...

Lastly, 50 nm of 99.999% pure Au was evaporated through a shadow mask to form the source and drain electrodes. The structure of the fabricated bottom-gate top-contact (BGTC) OFETs is shown in Figure ...

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