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National Graphene Institute, Henry Royce Institute, and Department of Materials, University of Manchester, Manchester M13 9PL, U.K.
氧化硅(SiOx,0<x<2)材料以其高比容量和低氧化还原电位而著称,是石墨负极最有前途的替代者之一。然而,其实际应用受到循环过程中体积的大幅变化 (约翻倍)和其导电性差等因素的影响。之前的研究揭示了SiOx不受限制的膨胀-收缩过程导致固体电解质界面 ...
Wenzhong Shen, Sheng Ma and Huanpei Huang present an overview of the ultraviolet-induced degradation affecting TOPCon cells ...
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