US President Donald Trump's first-term restrictions on silicon carbide (SiC), intended to limit China's access to the crucial ...
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Abstract: This paper studies the feasibility of direct flip-chip bonding of silicon carbide (SiC) chips onto alumina substrate for high-temperature applications up to 600℃. SiC dummy chips were ...
“Both silicon and SiC power devices are designed with the drain on the backside of the chip, and the substrate thickness represents the transistor’s gate length,” says James Lamb, corporate fellow at ...
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