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扬杰电子专利新突破:提升SiC MOSFET器件可靠性
2025年1月29日消息,扬州扬杰电子科技股份有限公司(以下简称扬杰电子)近日在国家知识产权局申请了一项引人瞩目的专利,名为“一种提高栅氧可靠性具有分裂栅的SiC MOSFET器件及其制备方法 ... 此外,通过在P-body下方区域设置P+区,扬杰电子成功减少了P ...
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