In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...

Abstract: In this letter, we present a high-performance aluminum nitride (AlN) lateral Schottky barrier diode (SBD) achieved through rapid thermal annealing (RTA) in an oxygen environment. This ...

Department of Photonics, National Yang Ming Chiao Tung University, No. 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan ...

A new technical paper titled “AlGaN/AlN heterostructures: an emerging platform for integrated photonics” was published by researchers at Humboldt-Universität zu Berlin and Ferdinand-Braun-Institut ...

Department of Physics, Chungnam National University, 99 Daehak-road, Yuseong-gu, Daejeon 34134, Republic of Korea ...

Engineers at Arizona State University are claiming to have delivered a significant breakthrough in the performance of AlN Schottky barrier diodes. “Our work is the first demonstration that ...

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