Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

Until earlier this decade, the scaling and performance trends of the logic transistor were mainly the result of SiO 2 gate oxide scaling as well as source–drain junction and well engineering.

These are analogous to the terminals on a bipolar transistor, in that the source fulfills a similar role to the emitter, the gate to the base, and the drain to the collector. Thus the three basic ...

The exterior layers of the transistor are known as the "drain" and "source," with the central layer being referred to as the "gate". The function of the transistor is to utilize the voltage applied to ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

The most important parameters are drain-source maximum current ... wired between gate and source. Unlike with BJT transistors that need a constant current flow, you only need to charge a gate ...

The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...

By this point, the distance between the source and drain had been reduced so ... which gives better control than the planar transistor’s single-sided gate. But between strained silicon and ...

The device described in the study is a radiative thermal transistor comprising a hot source, a cold drain, and a vanadium oxide (VOx)--based planar gate electrode. Efficient control of heat flow ...