News
Wolfspeed has created an evaluation board for its 1.7kV SiC (silicon carbide) mosfet, implementing a 48W power supply that can be fed from anywhere between 300Vdc and 1kVdc. It delivers two isolated ...
Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, ...
SemiQ has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact system-level designs at large scale. 1200 V SiC ...
Mitsubishi Electric’s newly developed silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) chip is incorporated into both new SLIMDIP packages. Compared to current ...
For some SiC MOSFETs, which commonly feature higher ... voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT.
At APEC 2025, Nexperia announced several important additions to its portfolio of enhancement-mode GaN and SiC devices. Among them is a new series of 1,200-V SIC MOSFETs available in thermally ...
Diodes has introduced some 650V SiC Schottky diodes, rated at 4 ... The surface-mount package requires less board space and provides a larger heat pad [than the] TO252 DPAK.” Applications include ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results