That's the kind of technology that researchers at Kyoto University have developed for the band gap of semiconductor materials. The work is published in the journal Computational Materials Science.

Techniques for Band Gap Engineering vary, including doping, the introduction of impurities into a semiconductor to alter its electrical properties; strain engineering, where stress is applied to ...

Bearish momentum persists for ON Semiconductor as weak Q4 earnings, declining margins, and poor Q1 guidance indicate further ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

The benefits of the wider band gap semiconductor flow on to other design factors, too. Thanks to higher breakdown voltage and lower on-resistance, at 1200 volts, a SiC part can have a die size 20 ...

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