反激拓扑是 高压单管 GaN的典型应用，快充场合常用。该拓扑在地线的处理上都需特别注意，如下图所示，Layout时辅助绕组地、IC信号地功率地在bulk电容处汇合，避免IC地受干扰导致驱动振荡。 在GaN应用时，Layout上还需注意以下方面： ...

The Controller IP is silicon proven and connects to DDR PHY via the DFI 4.0 interface to provide ... The IGALVDT11A is a TSMC CLN28HPC+/HPC/HPM 8-channel LVDS receiver PHY, which is used mainly in ...

Fig.2. Failure analysis methodologies used in IC development (a) (b) [1] JCH Phang, DSH Chan, M. Palaniappan, JM Chin, B. Davis, M Bruce, “A review of Laser Induced Techniques for Microelectronic ...

SAN JOSE, Calif., March 18, 2025 /PRNewswire/ -- Celera, the leader in fully automated, AI-enhanced analog design, today announced it is sampling the first ever analog IC completely designed by an ...