scmp.com8 天
Largest gallium wafer at lowest cost? How China leads on next-gen semiconductor tech
A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...
科学技術振興機構1 年
E1 High-Quality and Large-Diameter GaN Wafer
In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...
Digi Times12 天
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency ...
On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...
Electronics Weekly3 年
APEC: Fabless UK GaN company reveals easily-driven power transistors, with current sense
UK fab-less semiconductor company Cambridge GaN Devices has finally revealed its initial product range, at APEC in Houston. The company is using monolithic GaN integration, branded ‘ICeGaN’, to modify ...
Electronics Weekly2 年
Improved 40V bidirectional GaN power rail switch
Innoscience has released an improved bi-directional GaN transistor that can replace back-to-back silicon mosfets in high-side switching. Innoscience has released an improved bi-directional GaN ...
inc425 个月
Can AGNIT’s GaN Wafers Become India’s Edge In The Global Chip Market?
Having raised $3.5 Mn from 3one4 Capital and Zephyr Peacock recently, the startup is buckling up for the reliability check of its devices and plans to make about 1 Lakh devices in the next 12-24 ...