Modern ultra-fast-transition transistors made from silicon carbide (SiC) and gallium nitride (GaN) would bring 10-fold reductions in power losses in power electronics ... at turn-on to determine the ...

That little charger you plugged into an available wall outlet, needing one for each device you owned? How times have changed! Now, you can get your hands on a charger that can happily power ...

Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI datacenters, renewable energy generation and storage, cars and more Innoscience can make use of ...

Mazda Motor Corporation and Rohm have begun joint development of automotive components using GaN power semiconductors. Since ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si).

IQE, a supplier of compound semiconductor wafer products and advanced material solutions, and X-FAB Silicon Foundries, the specialty foundry, have announced a Joint Development Agreement (JDA) to ...

Joint Development Agreement (JDA) on GaN technology to build the future in power electronics ... Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit ...

Several months ago, accessory company Hyper introduced a set of three USB chargers designed with travel in mind, featuring compact designs based ...

As GaN and SiC power technologies deliver faster, lighter, and more compact solutions, such as single-stage BDS converters, so MCUs will need to be optimised to maximise these fast-switching ...

more energy-efficient power electronics." Substrate engineering can improve device performance—but it is complicated. Defects, such as substrate cracking, are common with growth on AlN and GaN.

OK, let me take a deep breath… the Belkin BoostCharge Pro GaN Dual Wall Charger 45W… whew… is a two-port model that can get your phone and a second device back to life in no time. That is if they’re ...