AZOM1 年
Deep Reactive Ion Etching — PlasmaPro 100 Estrelas DRIE
To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon ... as it offers a low-temperature process (−110 °C). Atomic Layer ...
Nanowerk9 个月
Reactive Ion Etching (RIE): Precise Nanoscale Patterning for Advanced Devices
High etch rates often come at the cost of reduced selectivity ... Applications of High-Aspect-Ratio Microfabrication Journal of Sensor Science and Technology, Optimization of Etching Profile in ...
Scientists Discover a Game-Changing Way to Etch 3D NAND Memory
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
Hackaday3 年
Garage Semiconductor Fab Gets Reactive-Ion Etching Upgrade
At least that’s [Sam]’s plan, which his new reactive-ion etching setup aims to make possible ... sits a vacuum chamber for the wafer to be etched. After evacuating the air, a small amount ...
AZOM1 年
Reactive Ion Etching (RIE) — PlasmaPro 100 RIE
Let us help you with your inquiries, brochures and pricing requirements Request A Quote Download PDF Copy Request A Quote Download PDF Copy Request A Quote Download ...
来自MSN9 天
Plasma technique doubles etch rate for 3D NAND flash memory
The narrow, deep holes required for this type of memory can be etched twice as fast with the right plasma and other key ...
Nanowerk8 个月
Wet Etching in Nanotechnology: Essential for Precision Nanostructures
(Image: A*STAR Institute of Materials Research and Engineering) Wet etching can be classified into two main types based on the etching mechanism and the resulting profile: It's worth noting that wet ...